1/9 february 2002 stW10NC60 sth10nc60fi n-channel 600v - 0.6 w - 10a - to-247/isowatt218 powermesh?ii mosfet (1)i sd 10a, di/dt 100a/s, v dd v (br)dss , t j t jmax (*) limited only by maximum temperature allowed n typical r ds (on) = 0.6 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor driver absolute maximum ratings (?)pulse width limited by safe operating area . type v dss r ds(on) i d stW10NC60 sth10nc60fi 600 v 600 v < 0.75 w < 0.75 w 10 a 10 a (*) symbol parameter value unit stW10NC60 sth10nc60fi v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 10 10 (*) a i d drain current (continuous) at t c = 100c 6.3 6.3 (*) a i dm (1) drain current (pulsed) 40 40 (*) a p tot total dissipation at t c = 25c 160 60 w derating factor 1.28 0.48 w/c dv/dt peak diode recovery voltage slope 3.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t stg storage temperature C 55 to 150 c t j max. operating junction temperature to-247 isowatt218 1 2 3 1 2 3 internal schematic diagram
stW10NC60 / sth10nc60fi 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-247 isowatt218 rthj-case thermal resistance junction-case max 0.78 2.08 c/w rthj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 820 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 4.5 a 0.6 0.75 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =20 v , i d =4.5a 9 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1420 pf c oss output capacitance 205 pf c rss reverse transfer capacitance 35 pf
3/9 stW10NC60 / sth10nc60fi electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300v, i d = 4.5 a r g =4.7 w v gs = 10v (see test circuit, figure 3) 20 ns t r rise time 16 ns q g total gate charge v dd = 480v, i d = 9.0 a, v gs = 10v 55 77 nc q gs gate-source charge 4.5 nc q gd gate-drain charge 31 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 300 v, i d = 4.5 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 64 32 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v, i d = 9.0 a, r g = 4.7 w, v gs = 10v (inductive load see, figure 5) 19 13 32 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 10 a i sdm (2) source-drain current (pulsed) 40 a v sd (1) forward on voltage i sd = 9 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 9 a, di/dt = 100a/s, v dd = 100v, tj = 150c (see test circuit, figure 5) 600 ns q rr reverse recovery charge 4.7 m c i rrm reverse recovery current 15.5 a safe operating area for isowatt218 safe operating area for to-247
stW10NC60 / sth10nc60fi 4/9 thermal impedance for isowatt218 thermal impedance for to-247 static drain-source on resistance transconductance output characteristics transfer characteristics
5/9 stW10NC60 / sth10nc60fi normalized gate thereshold voltage vs temp. normalized on resistance vs temperature capacitance variations gate charge vs gate-source voltage source-drain diode forward characteristics
stW10NC60 / sth10nc60fi 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 stW10NC60 / sth10nc60fi dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5 o5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
stW10NC60 / sth10nc60fi 8/9 dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.211 0.222 c 3.30 3.80 0.130 0.150 d 2.90 3.10 0.114 0.122 d1 1.88 2.08 0.074 0.082 e 0.75 0.95 0.030 0.037 f 1.05 1.25 0.041 0.049 f2 1.50 1.70 0.059 0.067 f3 1.90 2.10 0.075 0.083 g 10.80 11.20 0.425 0.441 h 15.80 16.20 0.622 0.638 l 9 0.354 l1 20.80 21.20 0.819 0.835 l2 19.10 19.90 0.752 0.783 l3 22.80 23.60 0.898 0.929 l4 40.50 42.50 1.594 1.673 l5 4.85 5.25 0.191 0.207 l6 20.25 20.75 0.797 0.817 n 2.1 2.3 0.083 0.091 r 4.6 0.181 dia 3.5 3.7 0.138 0.146 p025c/a isowatt218 mechanical data - weight : 4.9 g (typ.) - maximum torque (applied to mounting flange) recommended: 0.8 nm; maximum: 1 nm - the side of the dissipator must be flat within 80 m m
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